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      能源學院學術報告:Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials

      能源學院學術報告:Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials

      報告題目Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials



      報告人:Prof. Mark C. Hersam, Department of Materials Science and Engineering, Northwestern University, United States



              Following the success of ambient-stable two-dimensional (2D) materials such as graphene and hexagonal boron nitride, new classes of chemically reactive layered solids are being explored since their unique properties hold promise for improved device performance [1]. For example, chemically reactive 2D semiconductors (e.g., black phosphorus (BP) and indium selenide (InSe)) have shown enhanced field-effect mobilities under controlled conditions that minimize ambient degradation [2,3]. In addition, 2D boron (i.e., borophene) is an anisotropic metal with a diverse range of theoretically predicted phenomena including confined plasmons, charge density waves, and superconductivity [4], although its high chemical reactivity has limited experimental studies to inert ultrahigh vacuum conditions [5-8]. Therefore, to fully study and exploit the majority of 2D materials, methods for mitigating or exploiting their relatively high chemical reactivity are required [9]. In particular, covalent organic functionalization of BP minimizes ambient degradation, provides charge transfer doping, and enhances field-effect mobility [10]. In contrast, noncovalent organic functionalization of borophene leads to the spontaneous formation of electronically abrupt lateral organic-borophene heterostructures [11]. By combining organic and inorganic encapsulation strategies, even highly chemically reactive 2D materials (e.g., InSe) can be studied and utilized in ambient conditions [12].


      Selected Publications:


      [1] A. J. Mannix, et al., Nature Reviews Chemistry, 1, 0014 (2017).

      [2] D. Jariwala, et al., Nature Materials, 16, 170 (2017).

      [3] J. Kang, et al., Advanced Materials, 30, 1802990 (2018).

      [4] A. J. Mannix, et al., Nature Nanotechnology, 13, 444 (2018).

      [5] A. J. Mannix, et al., Science, 350, 1513 (2015).

      [6] G. P. Campbell, et al., Nano Letters, 18, 2816 (2018).

      [7] X. Liu, et al., Nature Materials, 17, 783 (2018).

      [8] X. Liu, et al., Nature Communications, 10, 1642 (2019).

      [9] C. R. Ryder, et al., ACS Nano, 10, 3900 (2016).

      [10] C. R. Ryder, et al., Nature Chemistry, 8, 597 (2016).

      [11] X. Liu, et al., Science Advances, 3, e1602356 (2017).

      [12] S. A. Wells, et al., Nano Letters, 18, 7876 (2018).





       Prof. Mark C. Hersam

      Materials Science and Engineering, Northwestern University

      2220 Campus Drive, Evanston, IL 60208-3108 USA

      Tel: 847-491-2696; Fax: 847-491-7820

      E-mail: m-hersam@northwestern.edu

      WWW: http://www.hersam-group.northwestern.edu/


              Mark C. Hersam is the Walter P. Murphy Professor of Materials Science and Engineering and Director of the Materials Research Center at Northwestern University. He also holds faculty appointments in the Departments of Chemistry, Applied Physics, Medicine, and Electrical Engineering. He earned a B.S. in Electrical Engineering from the University of Illinois at Urbana-Champaign (UIUC) in 1996, M.Phil. in Physics from the University of Cambridge (UK) in 1997, and a Ph.D. in Electrical Engineering from UIUC in 2000. His research interests include nanomaterials, nanomanufacturing, scanning probe microscopy, nanoelectronic devices, and renewable energy. Dr. Hersam has received several honors including the Presidential Early Career Award for Scientists and Engineers, TMS Robert Lansing Hardy Award, AVS Peter Mark Award, MRS Outstanding Young Investigator, U.S. Science Envoy, MacArthur Fellowship, and seven Teacher of the Year Awards. An elected member of the National Academy of Inventors, Dr. Hersam has founded two companies, NanoIntegris and Volexion, which are commercial suppliers of nanoelectronic and battery materials, respectively. Dr. Hersam is a Fellow of MRS, AVS, APS, AAAS, SPIE, and IEEE, and also serves as an Associate Editor of ACS Nano.



      Mark C. Hersam,美國西北大學材料科學與工程Walter P. Murphy教授,材料研究中心主任,為全球頂尖學術組織IEEE會士、World Technology Network會士,MRS會士、AAAS會士、APS會士、AVS會士、SPIE會士,2018年全球高被引科學家。目前擔任ACS Nano(IF13.9) 雜志副主編,Applied Physics Letters編委,NSF國際納米科學與工程協會主席。Mark C. Hersam亦是NanoIntegris公司(an elected member of National Academy of Inventors)的共同創始人。至今已獲得多項獎項和榮譽稱號,2016年被任命為美國科學大使,2014年獲得麥克阿瑟“天才獎”(MacArthur Fellow),2013年獲得國家自然科學基金委創新特別獎,2011年獲得W.M.Keck基礎科學與技術研究獎,2010年獲得MRS杰出青年科學家,2010年獲得ECS青年科學家獎,2006年獲得AVS Peter Mark獎,2006年獲得TMS Robert Lansing Hardy獎,2005年獲得美國青年科學家總統獎“Presidential Early Career Awards for Scientists and Engineers”。至今已在Nature, Science, Nature Chemistry, Nature Nanotechnology等國際頂尖期刊上發表學術論文500余篇,h-index高達89,他引次數高達34478i10指數為347

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